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Control of stress in highly doped polysilicon multilayer diaphragm structure
Polysilicon films can be used as stress regulating or compensating films to achieve zero resultant stress or low resultant tensile Ž .
stress in a multi-layer diaphragm structure. Influence of LPCVD deposition condition, substrate, film thickness, crystallized
degree and pre-annealing on residual stress in LPCVD polysilicon films was studied. The polysilicon deposited on PSG substrate
shows the lowest residual stress. The relationship between crystallized degree of polysilicon films and the film thickness was
investigated with the aid of Raman Scattering Spectrometry. The residual stress shows a significant dependence on the film
thickness because the crystallized degree raises with the film thickness. The test results show that: 1 for a thinner film 0.20 Ž . Ž
m , even if a higher deposition temperature is used 630 . Ž . C , its crystallized degree is still quite low and a quite higher residual
tensile stress results in the film; and 2 for a thicker film 4 Ž . Ž . Ž . m , even if an amorphous deposition temperature 580C is used,
significant crystallization will still occur in as-deposited films and a residual tensile stress results in the films. The stress control
test of highly boron doped polysilicon-oxide diaphragm structure was carried out. The result shows that the property and
magnitude of the stresses in a highly boron doped polysilicon-oxide diaphragm can be arbitrarily changed in a certain range by
varying the holding time of final annealing.
2019-01-10
Synthesis Using Synopsys Design Compiler,physical compiler and Primetime
介绍使用synopsys 工具集,进行数字电路的综合,时序检查等工作
2018-02-08
arm快速入门.pdf
ADS 集成开发环境是 ARM 公司推出的 ARM 核微控制器集成开发工具,英文全称为
ARM Developer Suite,成熟版本为 ADS1.2。ADS1.2 支持 ARM10 之前的所有 ARM 系列微
控制器,支持软件调试及 JTAG 硬件仿真调试,支持汇编、C、C++源程序,具有编译效率
高、 系统库功能强等特点, 可以在 Windows98、 Windows XP、 Windows2000 以及 RedHat Linux
上运行。
这里将简单介绍使用 ADS1.2 建立工程,编译连接设置,调试操作等等。最后还介绍了
基于 LPC2100 系列 ARM7 微控制器的工程模板的使用,EasyJTAG 仿真器的安装与使用。
2009-07-15
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